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Light-Induced Topological Phase Transition with Tunable Layer Hall Effect in Axion Antiferromagnets

来源:    发布时间 : 2025-01-09   点击量:  
年份 2024 专利号
授权公告日 发明人
期号、页码 24, 24(2024) 期刊名称 Nano Letters
文章作者 Cong Zhou,and Jian Zhou

The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light holds the potential to transform the axion insulating phase into a quantum anomalous Hall state in MnBi2Te4 thin films, featuring tunable Chern numbers (ranging up to ±2). In particular, we reveal the spatial rearrangement of the hidden layer-resolved anomalous Hall effect under light-driven Floquet engineering. Notably, upon Bi2Te3 layer intercalation, the anomalous Hall conductance predominantly localizes in the nonmagnetic Bi2Te3 layers that hold zero Berry curvature in the intact state, suggesting a significant magnetic proximity effect. Additionally, we estimate variations in the magneto-optical Kerr effect, giving a contactless method for detecting topological transitions. Our work not only presents a strategy to investigate emergent topological phases but also sheds light on the possible applications of the layer Hall effect in topological antiferromagnetic spintronics.


Link:Light-Induced Topological Phase Transition with Tunable Layer Hall Effect in Axion Antiferromagnets | Nano Letters

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