西安交通大学，材料科学与工程学院，材料创新设计研究中心

西安交通大学, 西安, 710049, 中国

个人主页：http://gr.xjtu.edu.cn/web/wzhang0

邮箱：wzhang0@mail.xjtu.edu.cn

研究领域

用于数据存储和类脑计算的相变存储材料

Phase-change materials for memory and brain-like computing devices

使用第一性原理计算及电子显微学实验和电学运输实验对相变材料的电学、光学性质进行表征及机理的分析和研究。

工作及教育经历

2021.01 - 今，教授 西安交通大学材料学院材料创新设计研究中心

2017.04 - 2020.12，教授 西安交通大学材料学院微纳尺度材料行为研究中心

2015.02 - 2017.03，特聘研究员 西安交通大学材料学院微纳尺度材料行为研究中心

2014.04 - 2015.04，博士后研究员 德国亚琛工业大学物理学系

2014.04 - 2011.03，物理学博士 德国亚琛工业大学物理学系

2010.06 - 2008.09，物理学硕士 浙江大学物理学系

2008.06 - 2004.09，物理学学士 浙江大学物理系

获奖

2019 KC Wong Lectureship

2018 Best Speaker Award, The European Phase-Change and Ovonic Symposium (E\PCOS)

2015 Borchers Badge by RWTH Aachen University

2013 Celebrity of DAAD

学术成果

Reviewers for 50+ journals, including Nat Mater, Science Adv, Adv Mater series, Phys Rev Lett, Appl Phys Lett, Acta Mater, J Mater Sci Tech, Nanoscale series, J Phys series, J Mater Chem C, IEEE Electron Dev Lett and others.

1. F. Rao,#* K. Y. Ding#, Y.-X. Zhou#, Y. H. Zheng, M. J. Xia, S. L. Lv, Z. T. Song,* S. L. Feng, I. Ronneberger, R. Mazzarello, Wei Zhang* and E. Ma, Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing, Science, 358, 1423-1427 (2017)

2. K. Ding#, J.-J. Wang#, Y.-X. Zhou#, H. Tian#, L. Lu, R. Mazzarello, C. Jia, Wei Zhang*, F. Rao*, E. Ma*, Phase-change heterostructure enables ultralow noise and drift for memory operation, Science, 366, 210-215 (2019)

3. Wei Zhang*, R. Mazzarello, M. Wuttig and E. Ma, Designing crystallization in phase-change materials for universal memory and neuro-inspired computing, Nature Reviews Materials, 4 150-168 (2019) (Journal Cover)

4. Wei Zhang, A. Thiess, P. Zalden, R. Zeller, P. H. Dederichs, J.-Y. Raty, M. Wuttig*, S. Blügel, R. Mazzarello*, Role of vacancies in metal-insulator transitions of crystalline phase-change materials, Nature Materials 11, 952-956 (2012)

5. J.-Y. Raty, Wei Zhang, J. Luckas, R. Mazzarello, C. Bichara, M. Wuttig, Aging mechanisms in amorphous phase-change materials, Nature Communications 6, 7467 (2015)

6. Wei Zhang*, E. Ma*, "Unveiling the structural origin to control resistance drift in phase-change memory materials",Materials Today 41, 156-176 (2020)

7. Y.-Z. Xu#, X.-D. Wang#, Wei Zhang*, L. Schäfer, J. Reindl, F. vom Bruch, Y.-X. Zhou, V. Evang, J.-J. Wang, V. L. Deringer, E. Ma, M. Wuttig*, R. Mazzarello*, Materials screening for disorder-controlled chalcogenide crystals for phase-change memory applications, Advanced Materials 33, 2006221 (2021)

8. Wei Zhang, I. Ronneberger, Y. Li, R. Mazzarello*, Magnetic properties of crystalline and amorphous phase-change materials doped with 3d impurities, Advanced Materials 24, 4387-4391 (2012).

9. T.-T. Jiang#, X.-D. Wang#, J.-J. Wang*, Y.-X. Zhou, D.-L. Zhang, L. Lu, C.-L. Jia, M. Wuttig, R. Mazzarello, Wei Zhang*, In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation, Acta Materialia 187, 103-111 (2020)

10. L. Sun#, Y.-X. Zhou#, X.-D. Wang, Y. Chen, V. L. Deringer, R. Mazzarello, Wei Zhang* Ab initio molecular dynamics and materials design for embedded phase-change memory, npj Computational Materials 7, 29 (2021)