一、研究方向
基于相变材料的相变存储器材料与器件，存算一体芯片材料与器件，尤其是相变材料制备、原子结构表征、器件逆向结构分析等方面。
二、研究经历
2024.01 - 今，教授，西安交通大学材料学院材料创新设计研究中心
2021.09 - 2023.12，特聘研究员，西安交通大学材料学院材料创新设计研究中心
2019.12 - 2021.08，研究员，洪堡学者 德国亚琛工业大学物理学系
2017.01 - 2018.01，访问博士生 德国于利希研究中心电镜中心（Ernst Ruska-Centre, ER-C）
三、获奖
2020 Humboldt Scholar, Alexander von Humboldt-Stiftung/Foundation
2018 Best Poster Award, The European Phase-Change and Ovonic Symposium (E\PCOS)
2018 Best Poster Award, The International Emergent Memory Symposium
2018 Best Poster Award, The 11th International Workshop on Materials Behavior at Micro and Nano-Scale
四、研究成果
已发表学术论文近20篇，其中在Science、ACS Nano、Chem Mater、Acta Mater、Nano Energy、Energy & Environmental Science等期刊发表一作/共一/通讯论文12篇。申请发明专利7项，授权4项。在国际相变存储年会等国际学术会议上获得最佳海报奖3次。
1. K. Ding#, J.-J. Wang# (equal contribution), Y. Zhou#, H. Tian#, L. Lu, R. Mazzarello, C.-L. Jia, W. Zhang*, F. Rao*, E. Ma*. Phase-change heterostructure enables ultralow noise and drift for memory operation, Science, 366, 210-215 (2019).
2. X. Wang, J. Tan, C. Han, J.-J. Wang* (corresponding author), L. Lu, H. Du, C.-L. Jia, V.L. Deringer*, J. Zhou, W. Zhang*. Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2, ACS Nano, 14, 4, 4456–4462 (2020).
3. J.-J. Wang#, C. Zhou#, Y. Yu#, Y. Zhou, L. Lu, B. Ge, Y. Cheng, C.-L. Jia, R. Mazzarello, Z. Shi*, M. Wuttig*, W. Zhang*. Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects, Nano Energy, 79 105484 (2021).
4. J.-J. Wang#, J. Wang#, H. Du, L. Lu, P. C. Schmitz, J. Reindl, A. M. Mio, C.-L. Jia, E. Ma, R. Mazzarello, M. Wuttig, W. Zhang*. Genesis and effects of swapping bi-layers in hexagonal GeSb2Te4, Chemistry of Materials, 30, 4770-4777 (2018).
5. T. Jiang, X. Wang, J.-J. Wang* (corresponding author), Y. Zhou, D. Zhang, L. Lu, C.-L. Jia, M. Wuttig, R. Mazzarello, W. Zhang*. In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation, Acta Materialia, 187, 103-111 (2020).
6. D. An#, J.-J. Wang # (equal contribution), J. Zhang, X. Zhai, Z. Kang, W. Fan, J. Yan, Y. Liu, L. Lu, C.-L. Jia, M. Wuttig, O. Cojocaru-Mirédin, S. Chen*, W. Wang*, G. J. Snyder, Y. Yu*. Energy & environmental science, 14, 5469-5479.
7. J.-J. Wang, I. Ronneberger, L. Zhou, L. Lu, V.L. Deringer, B. Zhang, L. Tian, H. Du, C. Jia, X. Qian, M. Wuttig, R. Mazzarello, W. Zhang*. Unconventional two-dimensional germanium dichalcogenides, Nanoscale, 10, 7363-7368 (2018).
8. J.-J. Wang, J. Wang, Y. Xu, T. Xin, Z. Song, M. Pohlmann, M. Kaminski, L. Lu, H. Du, C.-L. Jia, R. Mazzarello, M. Wuttig, W. Zhang*. Layer‐Switching Mechanisms in Sb2Te3. Physica Status Solidi RRL, 13, 1900320 (2019).
9. T. Jiang, J.-J. Wang* (corresponding author), L. Lu, C.-S. Ma, D. Zhang, F. Rao, C.-L. Jia, W. Zhang*. Progressive amorphization of GeSbTe phase-change material under electron beam irradiation, APL Materials, 7, 081121 (2019).
10. J.-J. Wang#, Y. Xu#, R. Mazzarello, M. Wuttig, W. Zhang*. A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials, Materials, 10, 862 (2017).
11. J.-J. Wang, T.-T. Jiang, L. Tian, D.-L. Zhang, W. Zhang*. Effects of Electron Beam Irradiation on Amorphous GeSbTe Film, Materials China, 38, 110-115 (2019).
